IS25LP512M-JLLE

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

JESD-609 Code :

e3

Terminal Pitch :

1.27mm

Supply Voltage-Min (Vsup) :

2.3V

Write Cycle Time - Word, Page :

1.6ms

Organization :

64MX8

Memory Size :

512Mb 64M x 8

Number of Functions :

1

HTS Code :

8542.32.00.51

Width :

6mm

Memory Format :

Flash

Surface Mount :

yes

ECCN Code :

3A991.B.1.A

Voltage - Supply :

2.3V~3.6V

Memory Interface :

SPI - Quad I/O, QPI, DTR

Memory Width :

8

Memory Type :

Non-Volatile

Factory Lead Time :

8 Weeks

Clock Frequency :

133MHz

Programming Voltage :

3V

Package / Case :

8-WDFN Exposed Pad

Operating Temperature :

-40°C~105°C TA

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Memory Density :

536870912 bit

Terminal Finish :

Tin (Sn)

Supply Voltage-Max (Vsup) :

3.6V

Operating Mode :

SYNCHRONOUS

Alternate Memory Width :

1

Height Seated (Max) :

0.8mm

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Packaging :

Tube

Supply Voltage :

3V

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Parallel/Serial :

Serial

JESD-30 Code :

R-PDSO-N8

Length :

8mm

Time@Peak Reflow Temperature-Max (s) :

10