IRLP3034PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 4.5V

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

341W Tc

Length :

15.87mm

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Threshold Voltage :

2.5V

Turn-Off Delay Time :

97 ns

Fall Time (Typ) :

355 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Drain Current-Max (Abs) (ID) :

195A

JEDEC-95 Code :

TO-247AC

Vgs (Max) :

±20V

FET Type :

N-Channel

Rise Time :

827ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 195A, 10V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

327A

Mount :

Through Hole

Height :

20.7mm

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

10315pF @ 25V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Number of Pins :

3

Transistor Element Material :

SILICON

Width :

5.3086mm

Package / Case :

TO-247-3

Avalanche Energy Rating (Eas) :

224 mJ

Published :

2009

Power Dissipation :

341W

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Turn On Delay Time :

65 ns

Drain-source On Resistance-Max :

0.0017Ohm

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE