IRFSL9N60ATRR

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

9.2A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

9.2A Tc

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

290 mJ

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.75Ohm

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

37A

Terminal Position :

Single

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

600V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Pin Count :

3

Power Dissipation-Max :

170W Tc

Rds On (Max) @ Id, Vgs :

750m Ω @ 5.5A, 10V

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Drain to Source Voltage (Vdss) :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2016