IRFSL9N60APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600V

Drain to Source Resistance :

750mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

9.2A

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Published :

2014

Radiation Hardening :

No

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Height :

9.65mm

Turn-Off Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

22 ns

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

9.2A Tc

Threshold Voltage :

4V

Input Capacitance :

1.4nF

Resistance :

750mOhm

Factory Lead Time :

8 Weeks

Vgs (Max) :

±30V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Lead Free :

Lead Free

Turn On Delay Time :

13 ns

Power Dissipation :

170W

Power Dissipation-Max :

170W Tc

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Rds On Max :

750 mΩ

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

REACH SVHC :

Unknown

Length :

10.67mm

Mounting Type :

Through Hole

Weight :

2.387001g

Max Operating Temperature :

150°C

Supplier Device Package :

I2PAK

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

750mOhm @ 5.5A, 10V

Packaging :

Tube

Min Operating Temperature :

-55°C

Width :

4.83mm

Mount :

Through Hole

Rise Time :

25ns