IRFSL9N60A

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

170W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

9.2A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

600V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Pbfree Code :

No

Continuous Drain Current (ID) :

9.2A

Rds On (Max) @ Id, Vgs :

750m Ω @ 5.5A, 10V

Published :

2016

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

DS Breakdown Voltage-Min :

600V

Pulsed Drain Current-Max (IDM) :

37A

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

290 mJ

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.75Ohm

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V