IRFSL7730PBF
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- Mfr.Part #
- IRFSL7730PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 195A TO262
- Stock
- 49,354
- In Stock ：
- 49,354
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 100A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 375W Tc
- Element Configuration :
- Single
- Number of Channels :
- 1
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 75V
- Turn On Delay Time :
- 21 ns
- Lead Free :
- Lead Free
- Weight :
- 2.084002g
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 12 Weeks
- Fall Time (Typ) :
- 115 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 407nC @ 10V
- Continuous Drain Current (ID) :
- 195A
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 13660pF @ 25V
- Turn-Off Delay Time :
- 180 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®, StrongIRFET™
- Rise Time :
- 120ns
- Mount :
- Through Hole
- Datasheets
- IRFSL7730PBF
N-Channel Tube 2.6m Ω @ 100A, 10V ±20V 13660pF @ 25V 407nC @ 10V 75V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL7730PBF Overview
A device's maximum input capacitance is 13660pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 195A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 180 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
IRFSL7730PBF Features
a continuous drain current (ID) of 195A
the turn-off delay time is 180 ns
a 75V drain to source voltage (Vdss)
IRFSL7730PBF Applications
There are a lot of Infineon Technologies
IRFSL7730PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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