IRFSL7730PBF
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- Mfr.Part #
- IRFSL7730PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- IRFSL7730 - 12V-300V N-CHANNEL P
- Stock
- 899
- In Stock ：
- 899
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 13660pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 115 ns
- Weight :
- 2.084002g
- Number of Channels :
- 1
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Continuous Drain Current (ID) :
- 195A
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 120ns
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 407nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2013
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 75V
- Turn-Off Delay Time :
- 180 ns
- Series :
- HEXFET®, StrongIRFET™
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 100A, 10V
- Power Dissipation-Max :
- 375W Tc
- Mount :
- Through Hole
- Turn On Delay Time :
- 21 ns
- Datasheets
- IRFSL7730PBF
N-Channel Tube 2.6m Ω @ 100A, 10V ±20V 13660pF @ 25V 407nC @ 10V 75V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL7730PBF Overview
A device's maximum input capacitance is 13660pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 195A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 180 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
IRFSL7730PBF Features
a continuous drain current (ID) of 195A
the turn-off delay time is 180 ns
a 75V drain to source voltage (Vdss)
IRFSL7730PBF Applications
There are a lot of Infineon Technologies
IRFSL7730PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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