IRFSL7534PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Threshold Voltage :

3.7V

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Input Capacitance (Ciss) (Max) @ Vds :

10034pF @ 25V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

294W Tc

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

195A

Drain-source On Resistance-Max :

0.0024Ohm

Series :

HEXFET®, StrongIRFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Mount :

Surface Mount, Through Hole

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

944A

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Turn-Off Delay Time :

118 ns

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Fall Time (Typ) :

93 ns

Turn On Delay Time :

20 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

279nC @ 10V

Element Configuration :

Single

DS Breakdown Voltage-Min :

60V

Rise Time :

134ns

Avalanche Energy Rating (Eas) :

775 mJ

Weight :

2.084002g

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Number of Pins :

3

Number of Terminations :

3

Factory Lead Time :

12 Weeks