IRFSL7530PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Published :

2004

FET Type :

N-Channel

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Series :

HEXFET®, StrongIRFET™

Element Configuration :

Single

Fall Time (Typ) :

104 ns

Number of Elements :

1

Drain-source On Resistance-Max :

0.002Ohm

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

375W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

60V

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

760A

Packaging :

Tube

Rise Time :

141ns

Mount :

Surface Mount, Through Hole

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Turn-Off Delay Time :

172 ns

Weight :

2.084002g

Transistor Application :

SWITCHING

Threshold Voltage :

3.7V

Continuous Drain Current (ID) :

195A

ECCN Code :

EAR99

Turn On Delay Time :

52 ns

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

411nC @ 10V

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

13703pF @ 25V

Mounting Type :

Surface Mount

Power Dissipation :

375W