IRFSL7440PBF
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- Mfr.Part #
- IRFSL7440PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N CH 40V 120A TO-262
- Stock
- 356
- In Stock ：
- 356
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 115 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 772A
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 3.9V @ 100µA
- Drain Current-Max (Abs) (ID) :
- 208A
- Number of Terminations :
- 3
- Threshold Voltage :
- 3V
- ECCN Code :
- EAR99
- Resistance :
- 2.5MOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 100A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 4730pF @ 25V
- Drain to Source Breakdown Voltage :
- 40V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 3 V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Published :
- 2013
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 120A
- Rise Time :
- 68ns
- Fall Time (Typ) :
- 68 ns
- Power Dissipation :
- 208W
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Terminal Position :
- Single
- Turn On Delay Time :
- 24 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 135nC @ 10V
- Series :
- HEXFET®, StrongIRFET™
- Power Dissipation-Max :
- 208W Tc
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Datasheets
- IRFSL7440PBF
N-Channel Tube 2.5m Ω @ 100A, 10V ±20V 4730pF @ 25V 135nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL7440PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4730pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.There is no drain current on this device since the maximum continuous current it can conduct is 208A.As a result of its turn-off delay time, which is 115 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 772A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 24 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
IRFSL7440PBF Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 115 ns
based on its rated peak drain current 772A.
a threshold voltage of 3V
IRFSL7440PBF Applications
There are a lot of Infineon Technologies
IRFSL7440PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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