IRFSL7437PBF
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- Mfr.Part #
- IRFSL7437PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 195A TO262
- Stock
- 10,123
- In Stock ：
- 10,123
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 195A
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 225nC @ 10V
- Turn-Off Delay Time :
- 78 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 12 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Radiation Hardening :
- No
- Threshold Voltage :
- 3V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 802 mJ
- Rise Time :
- 70ns
- Series :
- HEXFET®, StrongIRFET™
- Mount :
- Through Hole
- Resistance :
- 1.8MOhm
- Nominal Vgs :
- 3 V
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 1.8m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id :
- 3.9V @ 150μA
- Turn On Delay Time :
- 19 ns
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 53 ns
- Power Dissipation :
- 230W
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 7330pF @ 25V
- Power Dissipation-Max :
- 230W Tc
- Published :
- 2012
- Number of Pins :
- 3
- Datasheets
- IRFSL7437PBF
N-Channel Tube 1.8m Ω @ 100A, 10V ±20V 7330pF @ 25V 225nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL7437PBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 802 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7330pF @ 25V.This device has a continuous drain current (ID) of [195A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 78 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.Its overall power consumption can be reduced by using drive voltage (6V 10V).
IRFSL7437PBF Features
the avalanche energy rating (Eas) is 802 mJ
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 78 ns
a threshold voltage of 3V
IRFSL7437PBF Applications
There are a lot of Infineon Technologies
IRFSL7437PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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