IRFSL5620PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-262

Number of Pins :

3

Drain to Source Breakdown Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Turn On Delay Time :

8.6 ns

Power Dissipation-Max :

144W Tc

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

24A

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

200V

Turn-Off Delay Time :

17.1 ns

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Rds On (Max) @ Id, Vgs :

77.5mOhm @ 15A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Fall Time (Typ) :

9.9 ns

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Vgs(th) (Max) @ Id :

5V @ 100µA

Length :

10.668mm

Vgs (Max) :

±20V

Number of Elements :

1

Packaging :

Tube

Rise Time :

14.6ns

Input Capacitance :

1.71nF

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Power Dissipation :

144W

Height :

9.652mm

Max Operating Temperature :

175°C

Drain to Source Resistance :

77.5mOhm

Width :

4.826mm

Gate to Source Voltage (Vgs) :

20V

Published :

2008

Rds On Max :

77.5 mΩ

Mounting Type :

Through Hole