IRFSL4620PBF
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- Mfr.Part #
- IRFSL4620PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 24A TO262
- Stock
- 25,402
- In Stock ：
- 25,402
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Dual Supply Voltage :
- 200V
- Termination :
- Through Hole
- Height :
- 9.65mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1710pF @ 50V
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Resistance :
- 77.5mOhm
- Element Configuration :
- Single
- Series :
- HEXFET®
- Rds On Max :
- 77.5 mΩ
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 25.4 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Supplier Device Package :
- TO-262
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Fall Time (Typ) :
- 14.8 ns
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 24A
- Threshold Voltage :
- 5V
- Max Operating Temperature :
- 175°C
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Width :
- 4.826mm
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Mount :
- Through Hole
- Power Dissipation :
- 144W
- Nominal Vgs :
- 5 V
- Rds On (Max) @ Id, Vgs :
- 77.5mOhm @ 15A, 10V
- Drain to Source Breakdown Voltage :
- 200V
- Drain to Source Voltage (Vdss) :
- 200V
- Resistance :
- 63.7mOhm
- Published :
- 2008
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.668mm
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 144W Tc
- Turn On Delay Time :
- 13.4 ns
- Input Capacitance :
- 1.71nF
- Min Operating Temperature :
- -55°C
- Rise Time :
- 22.4ns
- Packaging :
- Tube
- Datasheets
- IRFSL4620PBF
N-Channel Tube 77.5mOhm @ 15A, 10V ±20V 1710pF @ 50V 38nC @ 10V 200V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4620PBF Overview
The maximum input capacitance of this device is 1710pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 24A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25.4 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 77.5mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13.4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFSL4620PBF Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 25.4 ns
single MOSFETs transistor is 77.5mOhm
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IRFSL4620PBF Applications
There are a lot of Infineon Technologies
IRFSL4620PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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