IRFSL4615PBF
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- Mfr.Part #
- IRFSL4615PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 33A TO262
- Stock
- 10,664
- In Stock ：
- 10,664
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 42mOhm @ 21A, 10V
- Drain to Source Voltage (Vdss) :
- 150V
- Published :
- 2008
- Rise Time :
- 35ns
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 150V
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1750pF @ 50V
- Turn-Off Delay Time :
- 25 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Series :
- HEXFET®
- Continuous Drain Current (ID) :
- 33A
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 144W Tc
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Resistance :
- 42mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Resistance :
- 34.5mOhm
- Radiation Hardening :
- No
- Height :
- 9.65mm
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Mount :
- Through Hole
- Nominal Vgs :
- 3 V
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 20 ns
- Length :
- 10.668mm
- Threshold Voltage :
- 3V
- Dual Supply Voltage :
- 150V
- Power Dissipation :
- 144W
- Vgs (Max) :
- ±20V
- Rds On Max :
- 42 mΩ
- Width :
- 4.826mm
- Max Operating Temperature :
- 175°C
- Turn On Delay Time :
- 15 ns
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Input Capacitance :
- 1.75nF
- Supplier Device Package :
- TO-262
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Datasheets
- IRFSL4615PBF
N-Channel Tube 42mOhm @ 21A, 10V ±20V 1750pF @ 50V 40nC @ 10V 150V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4615PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1750pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 33A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 42mOhm.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFSL4615PBF Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 42mOhm
a threshold voltage of 3V
a 150V drain to source voltage (Vdss)
IRFSL4615PBF Applications
There are a lot of Infineon Technologies
IRFSL4615PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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