IRFSL4610PBF
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- Mfr.Part #
- IRFSL4610PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 73A TO262
- Stock
- 5,721
- In Stock ：
- 5,721
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 73A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Operating Temperature :
- -55°C~175°C TJ
- Voltage - Rated DC :
- 100V
- Fall Time (Typ) :
- 70 ns
- Radiation Hardening :
- No
- Published :
- 2010
- Number of Terminations :
- 3
- Current Rating :
- 73A
- FET Type :
- N-Channel
- Series :
- HEXFET®
- Rise Time :
- 87ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.668mm
- Continuous Drain Current (ID) :
- 73A
- Power Dissipation-Max :
- 190W Tc
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 44A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Turn-Off Delay Time :
- 3 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Terminal Position :
- Single
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 4.826mm
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 18 ns
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 190W
- Pulsed Drain Current-Max (IDM) :
- 290A
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 100V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- Height :
- 9.65mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3550pF @ 50V
- Datasheets
- IRFSL4610PBF
N-Channel Tube 14m Ω @ 44A, 10V ±20V 3550pF @ 50V 140nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4610PBF Overview
A device's maximum input capacitance is 3550pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 73A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 3 ns.Its maximum pulsed drain current is 290A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFSL4610PBF Features
a continuous drain current (ID) of 73A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 3 ns
based on its rated peak drain current 290A.
IRFSL4610PBF Applications
There are a lot of Infineon Technologies
IRFSL4610PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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