IRFSL4510PBF
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- Mfr.Part #
- IRFSL4510PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 61A TO262
- Stock
- 1,724
- In Stock ：
- 1,724
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 2.084002g
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Published :
- 2012
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 13.9m Ω @ 37A, 10V
- Fall Time (Typ) :
- 28 ns
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 100V
- Nominal Vgs :
- 3 V
- Pulsed Drain Current-Max (IDM) :
- 250A
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- Power Dissipation :
- 140W
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Threshold Voltage :
- 3V
- Rise Time :
- 32ns
- Gate Charge (Qg) (Max) @ Vgs :
- 87nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HEXFET®
- Continuous Drain Current (ID) :
- 61A
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 140W Tc
- Factory Lead Time :
- 15 Weeks
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- ECCN Code :
- EAR99
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 28 ns
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3180pF @ 50V
- Number of Channels :
- 1
- Number of Pins :
- 3
- Turn On Delay Time :
- 13 ns
- Datasheets
- IRFSL4510PBF
N-Channel Tube 13.9m Ω @ 37A, 10V ±20V 3180pF @ 50V 87nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4510PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3180pF @ 50V.This device has a continuous drain current (ID) of [61A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28 ns.A maximum pulsed drain current of 250A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.Its overall power consumption can be reduced by using drive voltage (10V).
IRFSL4510PBF Features
a continuous drain current (ID) of 61A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 250A.
a threshold voltage of 3V
IRFSL4510PBF Applications
There are a lot of Infineon Technologies
IRFSL4510PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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