IRFSL4410ZPBF
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- Mfr.Part #
- IRFSL4410ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 97A TO262
- Stock
- 23,809
- In Stock ：
- 23,809
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 97A Tc
- Drain-source On Resistance-Max :
- 0.009Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 97A
- Width :
- 4.826mm
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2008
- Length :
- 10.668mm
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 100V
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 16 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4820pF @ 50V
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 230W Tc
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Height :
- 9.65mm
- Transistor Application :
- SWITCHING
- Series :
- HEXFET®
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 57 ns
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Turn-Off Delay Time :
- 43 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 242 mJ
- Case Connection :
- DRAIN
- Power Dissipation :
- 230W
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 58A, 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Rise Time :
- 52ns
- Packaging :
- Tube
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRFSL4410ZPBF
N-Channel Tube 9m Ω @ 58A, 10V ±20V 4820pF @ 50V 120nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4410ZPBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 242 mJ.A device's maximal input capacitance is 4820pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 97A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
IRFSL4410ZPBF Features
the avalanche energy rating (Eas) is 242 mJ
a continuous drain current (ID) of 97A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
IRFSL4410ZPBF Applications
There are a lot of Infineon Technologies
IRFSL4410ZPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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