IRFSL4410

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

97A

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Avalanche Energy Rating (Eas) :

242 mJ

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Power Dissipation-Max :

250W Tc

Pulsed Drain Current-Max (IDM) :

390A

Case Connection :

DRAIN

Mounting Type :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

FET Type :

N-Channel

Number of Elements :

1

Series :

HEXFET®

Published :

2007

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 150μA

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

Vgs (Max) :

±20V

Surface Mount :

No

Number of Terminations :

3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Position :

Single

Drain-source On Resistance-Max :

0.009Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

10m Ω @ 58A, 10V

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

Non-RoHS Compliant