IRFSL4310ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.826mm

Drain-source On Resistance-Max :

0.006Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

9.65mm

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Rds On (Max) @ Id, Vgs :

6m Ω @ 75A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 50V

Turn-Off Delay Time :

55 ns

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

560A

FET Type :

N-Channel

Length :

10.668mm

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

120A

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Packaging :

Tube

Power Dissipation :

250W

Gate to Source Voltage (Vgs) :

20V

Published :

2012

REACH SVHC :

No SVHC

Number of Pins :

3

Fall Time (Typ) :

57 ns

Qualification Status :

Not Qualified

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Turn On Delay Time :

20 ns

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 150μA

Power Dissipation-Max :

250W Tc

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

4 V

Factory Lead Time :

15 Weeks

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Series :

HEXFET®

Rise Time :

60ns

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Terminal Position :

Single