IRFSL4310PBF

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Mfr.Part #
IRFSL4310PBF
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO262
Stock
4,366
In Stock :
4,366

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Fall Time (Typ) :
78 ns
Rds On (Max) @ Id, Vgs :
7m Ω @ 75A, 10V
Number of Terminations :
3
Threshold Voltage :
4V
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
REACH SVHC :
No SVHC
Avalanche Energy Rating (Eas) :
980 mJ
Number of Pins :
3
Nominal Vgs :
4 V
Drain to Source Breakdown Voltage :
100V
Radiation Hardening :
No
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Number of Elements :
1
ECCN Code :
EAR99
Turn On Delay Time :
26 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Continuous Drain Current (ID) :
140A
Turn-Off Delay Time :
68 ns
Series :
HEXFET®
Element Configuration :
Single
Operating Temperature :
-55°C~175°C TJ
Time@Peak Reflow Temperature-Max (s) :
30
Length :
10.67mm
Rise Time :
110ns
Pulsed Drain Current-Max (IDM) :
550A
Operating Mode :
ENHANCEMENT MODE
Height :
9.65mm
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Drain Current-Max (Abs) (ID) :
75A
FET Type :
N-Channel
Power Dissipation-Max :
300W Tc
Drain-source On Resistance-Max :
0.007Ohm
Packaging :
Tube
Peak Reflow Temperature (Cel) :
260
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Power Dissipation :
330W
Published :
2006
Width :
4.83mm
Input Capacitance (Ciss) (Max) @ Vds :
7670pF @ 50V
Datasheets
IRFSL4310PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFSL4310PBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, IRFSL4310PBF pinout, IRFSL4310PBF datasheet PDF, IRFSL4310PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFSL4310PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFSL4310PBF


N-Channel Tube 7m Ω @ 75A, 10V ±20V 7670pF @ 50V 250nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

IRFSL4310PBF Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 980 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7670pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 140A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Drain current refers to the maximum continuous current a device can conduct, and it is 75A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 68 ns.Peak drain current is 550A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 26 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFSL4310PBF Features


the avalanche energy rating (Eas) is 980 mJ
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 550A.
a threshold voltage of 4V


IRFSL4310PBF Applications


There are a lot of Infineon Technologies
IRFSL4310PBF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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