IRFSL4228PBF
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- Mfr.Part #
- IRFSL4228PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 83A TO262
- Stock
- 14,913
- In Stock ：
- 14,913
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -40°C~175°C TJ
- Number of Elements :
- 1
- Power Dissipation :
- 330W
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Supplier Device Package :
- TO-262
- Length :
- 10.668mm
- Power Dissipation-Max :
- 330W Tc
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -40°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 150V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4530pF @ 25V
- Published :
- 2007
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Rds On Max :
- 15 mΩ
- Turn On Delay Time :
- 18 ns
- Max Operating Temperature :
- 175°C
- Gate to Source Voltage (Vgs) :
- 30V
- Voltage - Rated DC :
- 150V
- Continuous Drain Current (ID) :
- 83A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current Rating :
- 83A
- Input Capacitance :
- 4.53nF
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 24 ns
- RoHS Status :
- RoHS Compliant
- Width :
- 4.826mm
- Drain to Source Breakdown Voltage :
- 150V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 83A Tc
- Drain to Source Resistance :
- 15mOhm
- Height :
- 9.65mm
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 15mOhm @ 33A, 10V
- Datasheets
- IRFSL4228PBF
N-Channel Tube 15mOhm @ 33A, 10V ±30V 4530pF @ 25V 107nC @ 10V 150V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4228PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4530pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 83A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 24 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 15mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 150V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFSL4228PBF Features
a continuous drain current (ID) of 83A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 15mOhm
a 150V drain to source voltage (Vdss)
IRFSL4228PBF Applications
There are a lot of Infineon Technologies
IRFSL4228PBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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