IRFSL4227PBF
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- Mfr.Part #
- IRFSL4227PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 62A TO262
- Stock
- 13,306
- In Stock ：
- 13,306
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Power Dissipation-Max :
- 330W Tc
- Avalanche Energy Rating (Eas) :
- 140 mJ
- Height :
- 9.65mm
- RoHS Status :
- RoHS Compliant
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 31 ns
- Element Configuration :
- Single
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 21 ns
- Power Dissipation :
- 330W
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 200V
- Turn On Delay Time :
- 33 ns
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.026ohm
- Operating Temperature :
- -40°C~175°C TJ
- Length :
- 10.67mm
- Published :
- 2008
- Threshold Voltage :
- 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 4.83mm
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Mount :
- Through Hole
- Nominal Vgs :
- 5 V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Rise Time :
- 20ns
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±30V
- Series :
- HEXFET®
- Pulsed Drain Current-Max (IDM) :
- 260A
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 46A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 62A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IRFSL4227PBF
N-Channel Tube 26m Ω @ 46A, 10V ±30V 4600pF @ 25V 98nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4227PBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 140 mJ.A device's maximal input capacitance is 4600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 62A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 260A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 33 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFSL4227PBF Features
the avalanche energy rating (Eas) is 140 mJ
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 21 ns
based on its rated peak drain current 260A.
a threshold voltage of 5V
IRFSL4227PBF Applications
There are a lot of Infineon Technologies
IRFSL4227PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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