IRFSL4127PBF
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- Mfr.Part #
- IRFSL4127PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 72A TO262
- Stock
- 1,607
- In Stock ：
- 1,607
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 4.826mm
- Factory Lead Time :
- 12 Weeks
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 44A, 10V
- Number of Pins :
- 3
- Power Dissipation :
- 375W
- Continuous Drain Current (ID) :
- 72A
- Published :
- 2008
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5380pF @ 50V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 375W Tc
- Length :
- 10.668mm
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 250 mJ
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 22 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 56 ns
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 200V
- Mounting Type :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Transistor Application :
- SWITCHING
- Series :
- HEXFET®
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Turn On Delay Time :
- 17 ns
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Rise Time :
- 18ns
- Transistor Element Material :
- SILICON
- Resistance :
- 22mOhm
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Number of Elements :
- 1
- Element Configuration :
- Single
- Height :
- 9.652mm
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Datasheets
- IRFSL4127PBF
N-Channel Tube 22m Ω @ 44A, 10V 5380pF @ 50V 150nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4127PBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 5380pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 72A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 56 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.
IRFSL4127PBF Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 56 ns
IRFSL4127PBF Applications
There are a lot of Infineon Technologies
IRFSL4127PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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