IRFSL4115PBF
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- Mfr.Part #
- IRFSL4115PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 195A TO262
- Stock
- 48,799
- In Stock ：
- 48,799
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- Rise Time :
- 73ns
- Element Configuration :
- Single
- Length :
- 10.668mm
- Height :
- 9.65mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 5270pF @ 50V
- Number of Elements :
- 1
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.826mm
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 39 ns
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 99A
- Resistance :
- 12.1mOhm
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 150V
- Power Dissipation :
- 375W
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 375W Tc
- Turn-Off Delay Time :
- 41 ns
- Rds On (Max) @ Id, Vgs :
- 12.1m Ω @ 62A, 10V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Published :
- 2011
- Turn On Delay Time :
- 18 ns
- Datasheets
- IRFSL4115PBF
N-Channel Tube 12.1m Ω @ 62A, 10V ±20V 5270pF @ 50V 120nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4115PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5270pF @ 50V.This device has a continuous drain current (ID) of [99A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=150V, the drain-source breakdown voltage is 150V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 41 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IRFSL4115PBF Features
a continuous drain current (ID) of 99A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 41 ns
IRFSL4115PBF Applications
There are a lot of Infineon Technologies
IRFSL4115PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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