IRFSL4010PBF
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- Mfr.Part #
- IRFSL4010PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 180A TO262
- Stock
- 1,628
- In Stock ：
- 1,628
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 4.7MOhm
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 720A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Drain to Source Breakdown Voltage :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 9575pF @ 50V
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 106A, 10V
- Power Dissipation :
- 375W
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Width :
- 4.826mm
- Fall Time (Typ) :
- 77 ns
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 21 ns
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Height :
- 9.65mm
- Published :
- 2011
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Turn-Off Delay Time :
- 100 ns
- Continuous Drain Current (ID) :
- 180A
- Threshold Voltage :
- 4V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 375W Tc
- Element Configuration :
- Single
- Length :
- 10.668mm
- Radiation Hardening :
- No
- Rise Time :
- 86ns
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- IRFSL4010PBF
N-Channel Tube 4.7m Ω @ 106A, 10V ±20V 9575pF @ 50V 215nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4010PBF Overview
A device's maximal input capacitance is 9575pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 180A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 720A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFSL4010PBF Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 720A.
a threshold voltage of 4V
IRFSL4010PBF Applications
There are a lot of Infineon Technologies
IRFSL4010PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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