IRFSL38N20DPBF
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- Mfr.Part #
- IRFSL38N20DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 43A TO262
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 3.8W
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 14 Weeks
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Max Operating Temperature :
- 175°C
- Turn On Delay Time :
- 16 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Peak Reflow Temperature (Cel) :
- 260
- Threshold Voltage :
- 5V
- Continuous Drain Current (ID) :
- 44A
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 47 ns
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 300W
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Gate Charge (Qg) (Max) @ Vgs :
- 91nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 26A, 10V
- DS Breakdown Voltage-Min :
- 200V
- REACH SVHC :
- No SVHC
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Published :
- 2004
- Turn-Off Delay Time :
- 29 ns
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Min Operating Temperature :
- -55°C
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.054Ohm
- Length :
- 10.67mm
- Mount :
- Through Hole
- Series :
- HEXFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 460 mJ
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Rise Time :
- 95ns
- Drain to Source Voltage (Vdss) :
- 200V
- Height :
- 9.65mm
- Mounting Type :
- Through Hole
- Width :
- 4.826mm
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Datasheets
- IRFSL38N20DPBF
N-Channel Tube 54m Ω @ 26A, 10V 2900pF @ 25V 91nC @ 10V 200V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL38N20DPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 460 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2900pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 29 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).
IRFSL38N20DPBF Features
the avalanche energy rating (Eas) is 460 mJ
a continuous drain current (ID) of 44A
the turn-off delay time is 29 ns
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IRFSL38N20DPBF Applications
There are a lot of Infineon Technologies
IRFSL38N20DPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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