IRFSL3806PBF
- Mfr.Part #
- IRFSL3806PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 43A TO262
- Stock
- 2,248
- In Stock :
- 2,248
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Threshold Voltage :
- 4V
- Fall Time (Typ) :
- 47 ns
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Published :
- 2008
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Mount :
- Through Hole
- Width :
- 4.826mm
- Number of Pins :
- 3
- Series :
- HEXFET®
- Power Dissipation :
- 71W
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 49 ns
- Recovery Time :
- 33 ns
- Pulsed Drain Current-Max (IDM) :
- 170A
- Continuous Drain Current (ID) :
- 43A
- Resistance :
- 15.8mOhm
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 6.3 ns
- Radiation Hardening :
- No
- Length :
- 10.668mm
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Transistor Element Material :
- SILICON
- Rise Time :
- 40ns
- Factory Lead Time :
- 12 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Height :
- 9.65mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1150pF @ 50V
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 15.8m Ω @ 25A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 71W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Datasheets
- IRFSL3806PBF

N-Channel Tube 15.8m Ω @ 25A, 10V ±20V 1150pF @ 50V 30nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL3806PBF Overview
A device's maximal input capacitance is 1150pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 43A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 49 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 170A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFSL3806PBF Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 170A.
a threshold voltage of 4V
IRFSL3806PBF Applications
There are a lot of Infineon Technologies
IRFSL3806PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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