IRFSL3607PBF
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- Mfr.Part #
- IRFSL3607PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 80A TO262
- Stock
- 9
- In Stock ：
- 9
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 4 V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Terminal Position :
- Single
- Number of Elements :
- 1
- Dual Supply Voltage :
- 75V
- Case Connection :
- DRAIN
- Recovery Time :
- 50 ns
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 140W Tc
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 46A, 10V
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.009Ohm
- Length :
- 10.668mm
- Fall Time (Typ) :
- 96 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Drain to Source Breakdown Voltage :
- 75V
- Continuous Drain Current (ID) :
- 80A
- Number of Pins :
- 3
- Series :
- HEXFET®
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- FET Type :
- N-Channel
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tube
- Turn-Off Delay Time :
- 43 ns
- Rise Time :
- 110ns
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Termination :
- Through Hole
- Threshold Voltage :
- 4V
- Turn On Delay Time :
- 16 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3070pF @ 50V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Power Dissipation :
- 140W
- Width :
- 4.826mm
- Published :
- 2008
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 9.65mm
- Datasheets
- IRFSL3607PBF
N-Channel Tube 9m Ω @ 46A, 10V ±20V 3070pF @ 50V 84nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL3607PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3070pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [43 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFSL3607PBF Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 43 ns
a threshold voltage of 4V
IRFSL3607PBF Applications
There are a lot of Infineon Technologies
IRFSL3607PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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