IRFSL3607PBF
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- Mfr.Part #
- IRFSL3607PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- HEXFET POWER MOSFET
- Stock
- 9
- In Stock ：
- 9
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.009Ohm
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Width :
- 4.826mm
- Turn On Delay Time :
- 16 ns
- Series :
- HEXFET®
- Rise Time :
- 110ns
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Terminal Position :
- Single
- Mount :
- Through Hole
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 43 ns
- Termination :
- Through Hole
- JESD-609 Code :
- e3
- Recovery Time :
- 50 ns
- Drain to Source Breakdown Voltage :
- 75V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Lead Free :
- Lead Free
- Threshold Voltage :
- 4V
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 46A, 10V
- FET Type :
- N-Channel
- Height :
- 9.65mm
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 4 V
- Fall Time (Typ) :
- 96 ns
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 10.668mm
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Dual Supply Voltage :
- 75V
- Continuous Drain Current (ID) :
- 80A
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2008
- Power Dissipation :
- 140W
- Factory Lead Time :
- 15 Weeks
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 3070pF @ 50V
- Power Dissipation-Max :
- 140W Tc
- Datasheets
- IRFSL3607PBF
N-Channel Tube 9m Ω @ 46A, 10V ±20V 3070pF @ 50V 84nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL3607PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3070pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [43 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFSL3607PBF Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 43 ns
a threshold voltage of 4V
IRFSL3607PBF Applications
There are a lot of Infineon Technologies
IRFSL3607PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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