IRFSL3207ZPBF
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- Mfr.Part #
- IRFSL3207ZPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- IRFSL3207 - 12V-300V N-CHANNEL P
- Stock
- 2,967
- In Stock ：
- 2,967
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 68ns
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 75V
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 4.1m Ω @ 75A, 10V
- Current Rating :
- 170A
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 68 ns
- Threshold Voltage :
- 4V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 300W
- Packaging :
- Tube
- Series :
- HEXFET®
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Height :
- 9.65mm
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 55 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Width :
- 4.826mm
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 6920pF @ 50V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Voltage - Rated DC :
- 75V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 300W Tc
- Turn On Delay Time :
- 20 ns
- Length :
- 10.668mm
- Continuous Drain Current (ID) :
- 120A
- Factory Lead Time :
- 12 Weeks
- Resistance :
- 4.1mOhm
- Published :
- 2008
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 670A
- Case Connection :
- DRAIN
- Datasheets
- IRFSL3207ZPBF
N-Channel Tube 4.1m Ω @ 75A, 10V ±20V 6920pF @ 50V 170nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL3207ZPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6920pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 75V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 75V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 670A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFSL3207ZPBF Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 670A.
a threshold voltage of 4V
IRFSL3207ZPBF Applications
There are a lot of Infineon Technologies
IRFSL3207ZPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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