IRFSL3207

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

170 mJ

Terminal Position :

Single

Mounting Type :

Through Hole

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Pulsed Drain Current-Max (IDM) :

670A

Power Dissipation-Max :

330W Tc

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

120A

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

75V

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 50V

Published :

2006

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drain-source On Resistance-Max :

0.0041Ohm

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Drain to Source Voltage (Vdss) :

75V

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e3

Surface Mount :

No

FET Type :

N-Channel

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ