IRFSL3206PBF
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- Mfr.Part #
- IRFSL3206PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 120A TO262
- Stock
- 6,030
- In Stock ：
- 6,030
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 83 ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Radiation Hardening :
- No
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Turn On Delay Time :
- 19 ns
- Factory Lead Time :
- 12 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Continuous Drain Current (ID) :
- 120A
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 6540pF @ 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 55 ns
- Power Dissipation-Max :
- 300W Tc
- Length :
- 10.668mm
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 75A, 10V
- Terminal Position :
- Single
- Current Rating :
- 210A
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 840A
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Voltage - Rated DC :
- 60V
- Published :
- 2008
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Number of Pins :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 300W
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 4.826mm
- Height :
- 9.65mm
- Vgs (Max) :
- ±20V
- Rise Time :
- 82ns
- Datasheets
- IRFSL3206PBF
N-Channel Tube 3m Ω @ 75A, 10V ±20V 6540pF @ 50V 170nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL3206PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6540pF @ 50V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 55 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 840A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 19 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFSL3206PBF Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 840A.
IRFSL3206PBF Applications
There are a lot of Infineon Technologies
IRFSL3206PBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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