IRFSL31N20D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSIP-T3

DS Breakdown Voltage-Min :

200V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.082Ohm

Configuration :

Single

Power Dissipation-Max :

3.1W Ta 200W Tc

HTS Code :

8541.29.00.95

Drain Current-Max (Abs) (ID) :

31A

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

82m Ω @ 18A, 10V

RoHS Status :

Non-RoHS Compliant

Published :

2000

Number of Elements :

1

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Drain to Source Voltage (Vdss) :

200V

Number of Terminations :

3

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

31A Tc

FET Type :

N-Channel

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Packaging :

Tube

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

124A

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

420 mJ