IRFSL3107PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

9.65mm

Continuous Drain Current (ID) :

230A

Drain to Source Breakdown Voltage :

75V

Rds On (Max) @ Id, Vgs :

3m Ω @ 140A, 10V

Pulsed Drain Current-Max (IDM) :

900A

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Rise Time :

110ns

Mounting Type :

Through Hole

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Power Dissipation :

370W

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

370W Tc

Number of Elements :

1

Vgs (Max) :

±20V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

4.826mm

Turn On Delay Time :

19 ns

Turn-Off Delay Time :

99 ns

Length :

10.668mm

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

100 ns

Input Capacitance (Ciss) (Max) @ Vds :

9370pF @ 50V

Published :

2005

Terminal Position :

Single

Transistor Application :

SWITCHING

Mount :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Terminations :

3