IRFSL3006PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Fall Time (Typ) :

189 ns

Number of Pins :

3

Rise Time :

182ns

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

375W Tc

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Length :

10.668mm

Mounting Type :

Through Hole

Terminal Position :

Single

JESD-609 Code :

e3

Power Dissipation :

375W

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

12 Weeks

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

9.65mm

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

16 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

ECCN Code :

EAR99

Published :

2008

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Resistance :

2.5MOhm

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

118 ns

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 170A, 10V

Continuous Drain Current (ID) :

270A

Width :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

8970pF @ 50V

Packaging :

Tube

FET Type :

N-Channel