IRFSL3004PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Continuous Drain Current (ID) :

340A

Turn-Off Delay Time :

90 ns

FET Type :

N-Channel

Vgs (Max) :

±20V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Length :

10.67mm

Fall Time (Typ) :

130 ns

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.75m Ω @ 195A, 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Height :

9.65mm

Current - Continuous Drain (Id) @ 25°C :

195A Ta

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Number of Pins :

3

Packaging :

Tube

ECCN Code :

EAR99

Published :

2004

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Rise Time :

220ns

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

40V

Mount :

Through Hole

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

380W Tc

Power Dissipation :

380W

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Turn On Delay Time :

23 ns

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

4.83mm