IRFSL11N50A
- Mfr.Part #
- IRFSL11N50A
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 11A TO262-3
- Stock
- 6,688
- In Stock :
- 6,688
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 32 ns
- Continuous Drain Current (ID) :
- 11A
- Resistance :
- 550mOhm
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 190W Tc
- Weight :
- 2.387001g
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 14 ns
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 6.6A, 10V
- Pulsed Drain Current-Max (IDM) :
- 44A
- Additional Feature :
- AVALANCHE RATED
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- Length :
- 10.67mm
- Drain to Source Breakdown Voltage :
- 500V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Width :
- 4.83mm
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Height :
- 9.65mm
- Fall Time (Typ) :
- 27 ns
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Number of Channels :
- 1
- Case Connection :
- DRAIN
- Pin Count :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Avalanche Energy Rating (Eas) :
- 390 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1426pF @ 25V
- Published :
- 2016
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 34ns
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- IRFSL11N50A
N-Channel Tube 550m Ω @ 6.6A, 10V ±30V 1426pF @ 25V 51nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL11N50APBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 390 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1426pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 32 ns.Peak drain current is 44A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFSL11N50APBF Features
the avalanche energy rating (Eas) is 390 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 44A.
IRFSL11N50APBF Applications
There are a lot of Vishay Siliconix
IRFSL11N50APBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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