IRFS9N60ATRR
- Mfr.Part #
- IRFS9N60ATRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 9.2A D2PAK
- Stock
- 45,701
- In Stock :
- 45,701
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 750mOhm
- Rise Time :
- 25ns
- Current - Continuous Drain (Id) @ 25°C :
- 9.2A Tc
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Input Capacitance :
- 1.4nF
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 170W Tc
- Rds On (Max) @ Id, Vgs :
- 750mOhm @ 5.5A, 10V
- Min Operating Temperature :
- -55°C
- Max Operating Temperature :
- 150°C
- Drain to Source Voltage (Vdss) :
- 600V
- Mounting Type :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Length :
- 10.67mm
- Fall Time (Typ) :
- 22 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 30 ns
- Continuous Drain Current (ID) :
- 9.2A
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 13 ns
- Weight :
- 1.437803g
- Supplier Device Package :
- D2PAK
- Rds On Max :
- 750 mΩ
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Height :
- 4.83mm
- Width :
- 9.65mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Published :
- 2016
- Datasheets
- IRFS9N60ATRR
N-Channel Tape & Reel (TR) 750mOhm @ 5.5A, 10V ±30V 1400pF @ 25V 49nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS9N60ATRR Overview
The maximum input capacitance of this device is 1400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 750mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRFS9N60ATRR Features
a continuous drain current (ID) of 9.2A
the turn-off delay time is 30 ns
single MOSFETs transistor is 750mOhm
a 600V drain to source voltage (Vdss)
IRFS9N60ATRR Applications
There are a lot of Vishay Siliconix
IRFS9N60ATRR applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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