IRFS9N60A
- Mfr.Part #
- IRFS9N60A
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 9.2A D2PAK
- Stock
- 36,482
- In Stock :
- 36,482
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 750 mΩ
- Power Dissipation :
- 170W
- Input Capacitance :
- 1.4nF
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 9.2A
- Turn-Off Delay Time :
- 30 ns
- Vgs (Max) :
- ±30V
- Length :
- 10.67mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 170W Tc
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 13 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Resistance :
- 750mOhm
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 750mOhm
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 750mOhm @ 5.5A, 10V
- Packaging :
- Tube
- Height :
- 4.83mm
- Number of Elements :
- 1
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 22 ns
- Published :
- 2016
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 9.2A Tc
- Rise Time :
- 25ns
- Max Operating Temperature :
- 150°C
- Width :
- 9.65mm
- Supplier Device Package :
- D2PAK
- Weight :
- 1.437803g
- Datasheets
- IRFS9N60A
N-Channel Tube 750mOhm @ 5.5A, 10V ±30V 1400pF @ 25V 49nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS9N60A Overview
A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 750mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFS9N60A Features
a continuous drain current (ID) of 9.2A
the turn-off delay time is 30 ns
single MOSFETs transistor is 750mOhm
a 600V drain to source voltage (Vdss)
IRFS9N60A Applications
There are a lot of Vishay Siliconix
IRFS9N60A applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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