IRFS820B

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

500 V

Transistor Application :

SWITCHING

Manufacturer :

Rochester Electronics LLC

FET Feature :

-

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.6Ohm @ 1.25A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Qualification Status :

COMMERCIAL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

TO-220-3 Full Pack

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

200 mJ

Pin Count :

3

Series :

-

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

18 nC @ 10 V

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

610 pF @ 25 V

Product Status :

Active

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Number of Terminals :

3

Case Connection :

Isolated

Reach Compliance Code :

Unknown

Package :

Bulk

Transistor Element Material :

SILICON

Technology :

MOSFET (Metal Oxide)

Supplier Device Package :

TO-220F-3

Current - Continuous Drain (Id) @ 25°C :

2.5A (Tj)

Pulsed Drain Current-Max (IDM) :

8 A

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Power Dissipation (Max) :

33W (Tc)

Vgs (Max) :

±30V

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

500 V

Pbfree Code :

yes

Drive Voltage (Max Rds On, Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

Not Applicable

Drain-source On Resistance-Max :

2.6 Ω

Package Shape :

RECTANGULAR