IRFS7734TRLPBF
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- Mfr.Part #
- IRFS7734TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 183A D2PAK
- Stock
- 11,233
- In Stock ：
- 11,233
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 650A
- Drain to Source Breakdown Voltage :
- 75V
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Series :
- HEXFET®, StrongIRFET™
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 100A, 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 124 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 10150pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 183A Tc
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Rise Time :
- 123ns
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 670 mJ
- Continuous Drain Current (ID) :
- 183A
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Turn On Delay Time :
- 20 ns
- Weight :
- 3.949996g
- Fall Time (Typ) :
- 100 ns
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 12 Weeks
- Published :
- 2013
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 290W Tc
- Datasheets
- IRFS7734TRLPBF
N-Channel Tape & Reel (TR) 3.5m Ω @ 100A, 10V ±20V 10150pF @ 25V 270nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS7734TRLPBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 670 mJ.A device's maximal input capacitance is 10150pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 183A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 75V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 124 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 650A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (6V 10V).
IRFS7734TRLPBF Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 183A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 124 ns
based on its rated peak drain current 650A.
IRFS7734TRLPBF Applications
There are a lot of Infineon Technologies
IRFS7734TRLPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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