IRFS7734PBF
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- Mfr.Part #
- IRFS7734PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 183A D2PAK
- Stock
- 22,573
- In Stock ：
- 22,573
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 183A Tc
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Number of Channels :
- 1
- Power Dissipation-Max :
- 290W Tc
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 183A
- Drain to Source Voltage (Vdss) :
- 75V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Width :
- 9.65mm
- Turn On Delay Time :
- 20 ns
- Turn-Off Delay Time :
- 124 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 10150pF @ 25V
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 123ns
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 3.949996g
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Factory Lead Time :
- 17 Weeks
- Mounting Type :
- Surface Mount
- Length :
- 10.67mm
- Series :
- HEXFET®, StrongIRFET™
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 100A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 100 ns
- Vgs (Max) :
- ±20V
- Height :
- 4.83mm
- Datasheets
- IRFS7734PBF
N-Channel Tube 3.5m Ω @ 100A, 10V ±20V 10150pF @ 25V 270nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS7734PBF Overview
A device's maximum input capacitance is 10150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 183A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 124 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
IRFS7734PBF Features
a continuous drain current (ID) of 183A
the turn-off delay time is 124 ns
a 75V drain to source voltage (Vdss)
IRFS7734PBF Applications
There are a lot of Infineon Technologies
IRFS7734PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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