IRFS7730TRLPBF
- Mfr.Part #
- IRFS7730TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 195A D2PAK
- Stock
- 14,097
- In Stock :
- 14,097
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 100A, 10V
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 180 ns
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 21 ns
- Number of Elements :
- 1
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.0026Ohm
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 407nC @ 10V
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 13660pF @ 25V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- DS Breakdown Voltage-Min :
- 75V
- Fall Time (Typ) :
- 115 ns
- Published :
- 2013
- Rise Time :
- 120ns
- Avalanche Energy Rating (Eas) :
- 898 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 375W Tc
- Weight :
- 3.949996g
- Drain to Source Voltage (Vdss) :
- 75V
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 984A
- Factory Lead Time :
- 12 Weeks
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Continuous Drain Current (ID) :
- 195A
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Series :
- HEXFET®, StrongIRFET™
- Datasheets
- IRFS7730TRLPBF

N-Channel Tape & Reel (TR) 2.6m Ω @ 100A, 10V ±20V 13660pF @ 25V 407nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS7730TRLPBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 898 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 13660pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 195A amps.It is [180 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 984A.A turn-on delay time of 21 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 75V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
IRFS7730TRLPBF Features
the avalanche energy rating (Eas) is 898 mJ
a continuous drain current (ID) of 195A
the turn-off delay time is 180 ns
based on its rated peak drain current 984A.
a 75V drain to source voltage (Vdss)
IRFS7730TRLPBF Applications
There are a lot of Infineon Technologies
IRFS7730TRLPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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