IRFS7537TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

173A Tc

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

DS Breakdown Voltage-Min :

60V

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

84 ns

Continuous Drain Current (ID) :

173A

Weight :

3.949996g

Power Dissipation :

230W

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Height :

4.83mm

ECCN Code :

EAR99

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

700A

Vgs(th) (Max) @ Id :

3.7V @ 150μA

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Series :

HEXFET®, StrongIRFET™

Published :

2013

Input Capacitance (Ciss) (Max) @ Vds :

7020pF @ 25V

Avalanche Energy Rating (Eas) :

554 mJ

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Power Dissipation-Max :

230W Tc

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Elements :

1

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

105ns

Length :

10.67mm

Vgs (Max) :

±20V

Number of Terminations :

2

Width :

9.65mm

Mounting Type :

Surface Mount

Turn On Delay Time :

15 ns

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 100A, 10V

Turn-Off Delay Time :

82 ns

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V