IRFS7534PBF
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- Mfr.Part #
- IRFS7534PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N CH 60V 195A D2PAK
- Stock
- 6,993
- In Stock ：
- 6,993
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 175°C
- Drain to Source Resistance :
- 2.4MOhm
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Number of Channels :
- 1
- Weight :
- 3.949996g
- Series :
- HEXFET®, StrongIRFET™
- Turn-Off Delay Time :
- 118 ns
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 3.7V
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 195A
- Published :
- 2013
- Fall Time (Typ) :
- 93 ns
- Input Capacitance :
- 10.034nF
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package :
- D2PAK
- Rds On (Max) @ Id, Vgs :
- 2.4mOhm @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10034pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Packaging :
- Tube
- Power Dissipation :
- 294W
- Lead Free :
- Lead Free
- Rds On Max :
- 2.4 mΩ
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Drain to Source Voltage (Vdss) :
- 60V
- Turn On Delay Time :
- 20 ns
- Factory Lead Time :
- 17 Weeks
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 279nC @ 10V
- Power Dissipation-Max :
- 294W Tc
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Rise Time :
- 134ns
- Datasheets
- IRFS7534PBF
N-Channel Tube 2.4mOhm @ 100A, 10V ±20V 10034pF @ 25V 279nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS7534PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10034pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 195A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [118 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 2.4mOhm.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 3.7V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
IRFS7534PBF Features
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 118 ns
single MOSFETs transistor is 2.4mOhm
a 60V drain to source voltage (Vdss)
IRFS7534PBF Applications
There are a lot of Infineon Technologies
IRFS7534PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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