IRFS75347PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

290W

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

140 ns

Packaging :

Tube

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Number of Channels :

1

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Elements :

1

Power Dissipation-Max :

290W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G6

Input Capacitance (Ciss) (Max) @ Vds :

9990pF @ 25V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-263CB

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

30

Weight :

1.59999g

Fall Time (Typ) :

86 ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

240A

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.95m Ω @ 100A, 10V

Number of Pins :

7

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Published :

2013

Turn-Off Delay Time :

195 ns

Rise Time :

120ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Series :

HEXFET®, StrongIRFET™

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Case Connection :

DRAIN