IRFS7534-7PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

JEDEC-95 Code :

TO-263CB

FET Type :

N-Channel

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

290W Tc

Turn-Off Delay Time :

195 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Factory Lead Time :

16 Weeks

Series :

HEXFET®, StrongIRFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.95m Ω @ 100A, 10V

Turn On Delay Time :

140 ns

JESD-30 Code :

R-PSSO-G6

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

9990pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Terminal Form :

Gull wing

Number of Channels :

1

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

JESD-609 Code :

e3

Published :

2013

RoHS Status :

ROHS3 Compliant

Weight :

1.59999g

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Number of Pins :

7

Fall Time (Typ) :

86 ns

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Case Connection :

DRAIN

Power Dissipation :

290W

Rise Time :

120ns

Continuous Drain Current (ID) :

240A