IRFS7530TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Series :

HEXFET®, StrongIRFET™

Power Dissipation :

375W

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

3.7V @ 250μA

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

REACH SVHC :

No SVHC

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

760A

FET Type :

N-Channel

Continuous Drain Current (ID) :

195A

Input Capacitance (Ciss) (Max) @ Vds :

13703pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rise Time :

141ns

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

411nC @ 10V

Turn-Off Delay Time :

172 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Weight :

3.949996g

Transistor Application :

SWITCHING

Turn On Delay Time :

52 ns

Terminal Form :

Gull wing

Width :

9.65mm

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Number of Pins :

3

Drain-source On Resistance-Max :

0.002Ohm

Threshold Voltage :

3.7V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

60V

Lead Free :

Lead Free

Fall Time (Typ) :

104 ns

Published :

2013

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Length :

10.67mm

Vgs (Max) :

±20V

Power Dissipation-Max :

375W Tc

Height :

4.83mm

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V