IRFS7530PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

14 Weeks

Case Connection :

DRAIN

Series :

HEXFET®, StrongIRFET™

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

3.7V

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Drain-source On Resistance-Max :

0.002Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

104 ns

Lead Free :

Lead Free

Rise Time :

141ns

Transistor Element Material :

SILICON

Number of Pins :

3

Power Dissipation :

375W

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

760A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Continuous Drain Current (ID) :

195A

Gate Charge (Qg) (Max) @ Vgs :

411nC @ 10V

Weight :

3.949996g

Gate to Source Voltage (Vgs) :

3.7V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Power Dissipation-Max :

375W Tc

Terminal Position :

Single

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Turn On Delay Time :

52 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

172 ns

Input Capacitance (Ciss) (Max) @ Vds :

13703pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Vgs(th) (Max) @ Id :

3.7V @ 250μA

FET Type :

N-Channel

Vgs (Max) :

±20V

JESD-609 Code :

e3

Mount :

Surface Mount

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Published :

2013

Drain to Source Breakdown Voltage :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB