IRFS750A
- Mfr.Part #
- IRFS750A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 8.4A TO220F
- Stock
- 269
- In Stock :
- 269
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 4.2A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.78pF @ 25V
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- Isolated
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 400V
- Drain-source On Resistance-Max :
- 0.3Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±30V
- Drain Current-Max (Abs) (ID) :
- 8.4A
- Package / Case :
- TO-220-3 Full Pack
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 8.4A Tc
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 60A
- Qualification Status :
- COMMERCIAL
- Terminal Finish :
- MATTE TIN
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 400V
- Packaging :
- Tube
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Power Dissipation-Max :
- 49W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 131nC @ 10V
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Avalanche Energy Rating (Eas) :
- 1210 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Datasheets
- IRFS750A

N-Channel Tube 300m Ω @ 4.2A, 10V ±30V 2.78pF @ 25V 131nC @ 10V 400V TO-220-3 Full Pack
IRFS750A Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1210 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.78pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 8.4A.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFS750A Features
the avalanche energy rating (Eas) is 1210 mJ
based on its rated peak drain current 60A.
a 400V drain to source voltage (Vdss)
IRFS750A Applications
There are a lot of Rochester Electronics, LLC
IRFS750A applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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